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High-Performance InGaP/GaAs Superlattice-Emitter Bipolar Transistor with Multiple S-shaped Negative-
The epitaxial layers consisted of a 0.5 μm n+ = 1 × 1019 cm-3 GaAs subcollector layer,a 0.5 μm n- = 2 × 1016 cm-3 Ga......
对不添加镇流电阻的非均匀发射极条间距的多发射极条异质结双极晶体管(HBT)的射频功率性能和表面温度分布进行了测量,并与常规采用......
